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| WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -30 12 -4.2 -30 1.4 140 -55~+150 Unit V A Pulsed Drain Current 1,2 Total Power Dissipation(T A=25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC2305= http//:www.weitron.com.tw WEITRON 1/4 Rev.B 05-Jun-09 WTC2305 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source Leakage C urrent VGS = 12V Drain- Source Leakage Current(Tj=25C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS=-10V,ID=-4.2A VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-1.0A Forward Transconductance VDS =-5.0V, ID =-5.0A R DS(o n) 7 53 64 86 11 70 85 130 m S V(BR)DSS VGS(Th) I GSS I DSS -30 -0.7 V -1.3 100 nA - - -1 A g fs Dynamic Total Gate Charge VDS = -15V, ID = -4A, VGS = -4.5V Gate-Source Charge VDS = -15V, ID = -4A, VGS = -4.5V Gate-Drain Charge VDS = -15V, ID = -4A, VGS = -4.5V Turn-On Delay Time VDD = -15V, RL= 3.6 , ID = -1A, VGEN = -10V , RG = 6 Turn-On Rise Time VDD = -15V, RL= 3.6 , ID = -1A, VGEN = -10V , RG = 6 Turn-Off Delay Time VDD = -15V, RL= 3.6 , ID = -1A, VGEN = -10V , RG = 6 Turn-Off Fall Time VDD = -15V, RL= 3.6 ID = -1A, VGEN = -10V , RG = 6 Input Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Output Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Reverse Transfer Capacitance VDS = -15V, VGS = 0V , f = 1.0 MHz Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss - 6.36 1.79 1.42 11.36 2.32 34.88 3.52 826.18 90.74 53.18 - nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -1.0A, VGS = 0V Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding 3. Guaranteed by design; not subject to production testing IS VSD -2.2 -1 A V WEITRON http//www.weitron.com.tw : 2/4 Rev.B 05-Jun-09 WTC2305 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 Rev.B 05-Jun-09 WTC2305 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 Rev.B 05-Jun-09 |
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